Static random access memories and access methods thereof

Details Static random access memories and access methods thereof Static random access memories and access methods thereof

2011-07-19

2011-07-19

Pham, Ly D (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S189020, C365S189040, C365S190000, C365S196000, C365S205000

Reexamination Certificate

active

07983073

ABSTRACT:
A static random access memory device capable of preventing stability issues during a write operation is provided, in which a memory cell is coupled to a read word line, a write word line, a read bit line, a write bit line and a complementary write bit line, and a multiplexing unit is coupled to the read bit line, the write bit line and the complementary write bit line. The multiplexing unit applies first and second logic voltages representing a logic state stored in the memory cell to the write bit line and the complementary write bit line, respectively, when the memory cell is not selected to be written by an input signal from a data driver and the read word line is activated, in which the first and second logic voltages are opposite to each other.

REFERENCES:
patent: 7583543 (2009-09-01), Sumitani
patent: 2008/0074932 (2008-03-01), Sumitani
“Wordling & Bitling Pulsing Schemes for Improving SPAM Cell Stability in Low-Vcc 65nm CMOS Designs”, Muhammad et al., Symposium on VLSI Ciscuits Digest of Technical Papers, IEEE, 2006.
“6.6+ GHz Low Vmin, read and half select disturb-free 1.2 Mb SRAM”, R. Joshi, et al, Symposium on VLSI Circuits Digest of Technical Papers, 2007.

Affiliated with

Also associated with

Rating

Static random access memories and access methods thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Static random access memories and access methods thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Static random access memories and access methods thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2688270