Static ram having an active area with a tapered bottom surface

Details Static ram having an active area with a tapered bottom surface Static ram having an active area with a tapered bottom surface

1995-03-29

1996-04-09

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257347, 257350, 257 66, 257 69, 257903, 257618, H01L 2701, H01L 2712, H01L 310392

Patent

active

055064353

ABSTRACT:
A thin film transistor in which a device active layer is formed on an insulation film, in which an interface state density present at the interface between the active layer and the insulation film is set to less than 1.times.10.sup.11 /cm.sup.2. The characteristics of TFT can be enhanced by decreasing the leak current and SRAM memory cell can be provided with easy design for the process and the structure while avoiding increase in the resistance and additional capacitance and ensuring voltage withstand.

REFERENCES:
patent: 4442448 (1984-04-01), Shinbo
patent: 4584762 (1986-04-01), Soclof
patent: 5068124 (1991-11-01), Batey et al.

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