Static RAM having a stable high-resistance load

Details Static RAM having a stable high-resistance load Static RAM having a stable high-resistance load

1998-02-18

1999-09-07

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257380, 257382, 257538, 257904, H01L 2976, H01L 2900, H01L 2711

Patent

active

059491132

ABSTRACT:
A static RAM has a low resistive contact film disposed in direct contact with a storage node of a memory cell and the gate electrode of a driver transistor in a through-hole, and in direct contact with an end portion of a high-resistance load. An accurate and stable resistance can be obtained for the high-resistance load without raising the contact resistance between the storage node and the gate electrode of the driver transistor.

REFERENCES:
patent: 4785342 (1988-11-01), Yamanaka et al.
patent: 5349206 (1994-09-01), Kimura
patent: 5508540 (1996-04-01), Ikeda et al.
patent: 5661325 (1997-08-01), Hayashi et al.

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