Static RAM cell with high speed and stability

Static information storage and retrieval – Systems using particular element – Flip-flop

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365190, G11C 1100

Patent

active

049950002

ABSTRACT:
The speed and stability of a 4T static RAM cell (10) comprising cross-coupled inverters with two driver transistors, (18, 20) and two pass-gate transistors (14,16) are improved by replacing the driver transistors with a modified driver element (33, 35), comprising at least two transistors (18, 18') having common gates and common sources and with a resistor (42) connecting the drains.

REFERENCES:
patent: 4665508 (1987-05-01), Chang
patent: 4782467 (1988-11-01), Belt et al.
IBM Technical Disclosure Bulletin vol. 19, No. 4, Sep. 1976 Four Square Mil Ten Microwatt Memory Cell Atwood.
IBM Technical Disclosure Bulletin vol. 18, No. 2, Jul. 1975, Cascode Shift Register Gensbach.

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