Static RAM cell with high speed and improved cell stability

Static information storage and retrieval – Systems using particular element – Flip-flop

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365 51, G11C 1300

Patent

active

051538520

ABSTRACT:
The speed and stability of a 4T static RAM cell (10) comprising cross-coupled inverters with two driver transistors (18, 20) and two pass-gate transistors (14,16) are improved by replacing the driver transistors with a modified driver element (33, 35), comprising at least two transistors (18, 18') having common gates and common sources and with a resistor (42) connecting the drains.

REFERENCES:
patent: 5086410 (1992-02-01), Bergemont

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