Static RAM cell

Details Static RAM cell Static RAM cell

1982-06-21

1985-11-19

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Flip-flop

365190, G11C 1140

Patent

active

045546444

ABSTRACT:
A static RAM cell (11) is constructed utilizing low resistivity positive and negative power supply leads (13,14), thus eliminating the problem of instability of the data stored within the cell. The negative power supply lead is formed of a first layer of low resistivity polycrystalline silicon/tantalum silicide, and the positive power supply lead is formed of a second layer of polycrystalline silicon. The use of a low resistivity negative power supply lead causes the voltage drop on the negative power supply lead to be substantially reduced as compared with prior art devices, thereby providing during the read operation substantially equal voltages to the gates of the two bistable transistors of each cell, thus eliminating the problem of instability during reading.
Depletion load devices (11,12) are formed utilizing the layer of polycrystalline silicon as the source, drain and channel and the layer of polycrystalline silicon/tantalum silicide as the gate. In this manner, silicon area is not required to form the depletion load devices, thus minimizing cell size.

REFERENCES:
patent: 3772660 (1973-11-01), Norman
patent: 4247915 (1981-01-01), Bartlett
patent: 4342101 (1982-07-01), Edwards
Linton et al., "Low-Power FET Storage Cell", IBM Tech. Disc. Bull., vol. 17, No. 11, Apr. 1975, pp. 3338-3339.
"16-K Static RAM Takes New Route to High Speed", by Rahul Sud and Kim C. Hardee, Electronics, Sep. 11, 1980.
"A 15-ns 1024-Bit Fully Static MOS RAM", Toshio Wada, et al., IEEE Journal of Solid-State Circuits, vol. SC-13, No. 5, Oct. 1978.
"Variable Resistance Polysilicon for High Density CMOS RAM", by T. Iizuka, et al., IEEE 1979, (CH1504-0/79/0000-0370500.75).
"A High Peformance MOS Technology for 16K Static RAM", by S. S. Liu, et al., 1979, IEEE, (CH1504-0/79/0000-0352500.75).
"An 8K.times.8 Bit Static MOS RAM Fabricated by n-MOS
-Well CMOS Technology", by T. Ohzone, et al., 1980, IEEE, (0018-9200/80/1000-0854$00.75).
"Composite Silicide Gate Electrodes-Interconnections by VLSI Device Technologies", H. J. Geipel, et al., 1980, IEEE, (0018-9383/80/080-1417$00).

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