Static memory device including supplemental gate capacitance

Details Static memory device including supplemental gate capacitance Static memory device including supplemental gate capacitance

1997-03-27

1998-12-01

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Flip-flop

365154, G11C 1100

Patent

active

058448373

ABSTRACT:
A static semiconductor memory device includes a semiconductor substrate, first and second load transistors located along a first power line, and first and second drive transistors located along a second power line. The device further includes first and second select transistors, a first connection line, a second connection line, and a capacitor. The first connection line is commonly connected a gate of the first load transistor and a gate of the first drive transistor to drains of the second load transistor, the second drive transistor and the first select transistor. The second connection line is commonly connected a gate of the second load transistor and a gate of the second drive transistor to drains of the first load transistor, the first drive transistor and the second select transistor. The capacitor is supplemented with at least one of the first connection line and the second connection line.

REFERENCES:
patent: 5390143 (1995-02-01), Manning
patent: 5404326 (1995-04-01), Okamoto
patent: 5406107 (1995-04-01), Yamaguchi
patent: 5469065 (1995-11-01), Houston
patent: 5506802 (1996-04-01), Kiyomo
patent: 5515313 (1996-05-01), Yamaguchi
patent: 5523966 (1996-06-01), Idei et al.
patent: 5536960 (1996-07-01), Hayashi
patent: 5610856 (1997-03-01), Yoshizumi et al.

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