Static memory device allowing correct data reading

Details Static memory device allowing correct data reading Static memory device allowing correct data reading

1998-01-20

1999-10-12

Hoang, Huan

Static information storage and retrieval

Systems using particular element

Flip-flop

365156, 365190, 365177, G11C 1100

Patent

active

059663197

ABSTRACT:
A memory cell includes driver transistors constituting a cross coupled type flipflop, access transistors driven in response to a signal potential on a word line, and bipolar transistors for connecting the memory cell to bit lines. For the bit lines, a read load circuit including diode coupled p channel MOS transistors and cross coupled p channel MOS transistors is provided, which supplies current when activated, and latches the bit line potentials after a prescribed time period. Stable data reading at high speed with low current consumption even under low power supply voltage is ensured, without causing data destruction.

REFERENCES:
patent: 4868628 (1989-09-01), Simmons
patent: 5063540 (1991-11-01), Takahashi
patent: 5483483 (1996-01-01), Choi et al.
patent: 5508961 (1996-04-01), Han

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