Static memory cell using field implanted resistance

Details Static memory cell using field implanted resistance Static memory cell using field implanted resistance

1976-12-27

1978-05-30

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

365222, 365230, 307238, G11C 1140

Patent

active

040927350

ABSTRACT:
A cell for a semiconductor memory of the static type employs two conventional MOS transistors along with a field implanted resistance which functions as a grounded-gate junction FET. Along with other resistor elements, these devices provide a grounded-gate amplifier with voltage gain and a source follower, creating a circuit which is stable with either a "1" or "0" stored. No clock or other refresh circuitry is needed.

REFERENCES:
patent: 3576571 (1971-04-01), Booher
patent: 3876993 (1975-04-01), Cavanaugh
patent: 3955181 (1976-05-01), Raymond

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