Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-11-12
1998-05-26
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257 25, 257104, 257314, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
057570515
ABSTRACT:
A static memory cell having no more than three transistors. A static memory cell comprises a semiconductor substrate of a first conductivity type; a buried layer in the substrate, the buried layer having a second conductivity type opposite to the first conductivity type; a transistor formed over the buried layer, the transistor having a source of the second conductivity type, a gate, and a drain of the second conductivity type, the source having a depth in the substrate greater than the depth of the drain; and alternating layers of insulative and conductive material formed proximate -the source, including two conductive layers and two insulative layers, one of the insulative layers being in junction relation to the source.
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Press Release, "Texas Instruments Develops New Silicon Switching Device for Future Integrated Circuits". No date.
Karniewicz Joseph
Wu Jeff Zhiqiang
Giordana Adriana
Micro)n Technology, Inc.
Thomas Tom
LandOfFree
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