Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-02-10
1998-07-14
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257903, 257904, 257104, H01L 2976
Patent
active
057809062
ABSTRACT:
A static memory cell having no more than three transistors. A static memory cell is formed by providing a semiconductor substrate; forming a buried n-type layer in the substrate, the n-type layer having a first average n-type dopant concentration of at least 1.times.10.sup.16 ions/cm.sup.3 ; forming an n-channel transistor relative to the substrate over the buried n-type layer, the n-channel transistor having a source, a gate, and a drain, the source having a second average n-type dopant concentration of at least 1.times.10.sup.19 ions/cm.sup.3 and the drain having a third average n-type dopant concentration of at least 1.times.10.sup.19 ions/cm.sup.3, and the source having a depth deeper than the drain so as to be closer to the buried n-type layer than the drain; and forming a p-type region in junction with the source to define a tunnel diode between the p-type region and the source.
REFERENCES:
patent: 4198644 (1980-04-01), Esaki
patent: 4360897 (1982-11-01), Lehovec
patent: 4396999 (1983-08-01), Malaviya
patent: 4622573 (1986-11-01), Bakeman, Jr. et al.
patent: 4649629 (1987-03-01), Miller et al.
patent: 5032891 (1991-07-01), Takagi et al.
patent: 5084401 (1992-01-01), Hagino
patent: 5099191 (1992-03-01), Galler et al.
patent: 5225700 (1993-07-01), Smayling
patent: 5320974 (1994-06-01), Hori et al.
patent: 5321285 (1994-06-01), Lee et al.
patent: 5534714 (1996-07-01), Beam, III et al.
patent: 5629546 (1997-05-01), Wu et al.
patent: 5675533 (1997-10-01), Niuya et al.
IBM Technical Disclosure Bulletin, vol. 11, No. 10, p. 1218 by Gladu, Mar. 1969.
Karniewicz Joseph
Wu Jeff Zhiqiang
Micro)n Technology, Inc.
Prenty Mark V.
LandOfFree
Static memory cell and method of manufacturing a static memory c does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Static memory cell and method of manufacturing a static memory c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Static memory cell and method of manufacturing a static memory c will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1884810