Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1997-12-19
1999-08-31
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257263, 257264, 257266, 257267, 257 77, H01L 2980, H01L 29808, H01L 29812
Patent
active
059457015
ABSTRACT:
A static induction transistor having source, drain and gate regions. Channel regions are defined between adjacent gates and a drift region is defined from the ends of the channel regions to the drain. The channel and drift regions have predetermined doping concentrations with the doping concentration of the channel regions being greater than the doping concentration of the drift region.
REFERENCES:
patent: 4326209 (1982-04-01), Nishizawa et al.
patent: 4551909 (1985-11-01), Cogan et al.
patent: 4587712 (1986-05-01), Baliga
patent: 5418376 (1995-05-01), Muraoka et al.
R.R. Siergeij, et al., "High Power 4H-SiC Static Induction Transistors," IEDM, 1995, pp. 353-356.
Agarwal Anant K.
Brandt Charles D.
Clarke Rowland C.
Siergiej Richard R.
Guay John
Northrop Grumman Corporation
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