Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-09-06
2010-12-14
Tran, Tan N (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S358000, C257S359000, C257S173000, C361S220000
Reexamination Certificate
active
07851863
ABSTRACT:
A static electricity countermeasure component comprising; a ceramic substrate; at least two extractor electrodes opposingly disposed and mutually separated on the ceramic substrate; an over-voltage protective material layer disposed to cover a portion of each extractor electrode and a gap between the extractor electrodes, containing a metal powder and a silicone-based resin; an intermediate layer disposed over the over-voltage protective material layer, containing an insulating powder and a silicone-based resin; and a protective resin layer disposed over the intermediate layer.
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International Search Report issued Nov. 28, 2006 in the International (PCT) Application No. PCT/JP2006/317663.
Nozoe Kenji
Tokunaga Hideaki
Panasonic Corporation
Tran Tan N
Wenderoth , Lind & Ponack, L.L.P.
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