States encoding in multi-bit flash cells for optimizing...

Electrical computers and digital processing systems: memory – Storage accessing and control – Control technique

Reexamination Certificate

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C711S005000, C711S103000, C711S127000, C714S701000, C714S756000, C714S762000, C714S764000, C365S185010, C365S185030

Reexamination Certificate

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07493457

ABSTRACT:
To store N bits of M≧2 logical pages, the bits are interleaved and the interleaved bits are programmed to ┌N/M┐ memory cells, M bits per cell. Preferably, the interleaving puts the same number of bits from each logical page into each bit-page of the ┌N/M┐ cells. When the bits are read from the cells, the bits are de-interleaved. The interleaving may be deterministic or random, and may be effected by software or by dedicated hardware.

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U.S. Appl. No. 11/061,634 Lasser : States Encoding In Multi-Bit Flash Cells For Optimizing Error Rate filed Feb. 22, 2005.

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