States encoding in multi-bit flash cells for optimizing...

Electrical computers and digital processing systems: memory – Storage accessing and control – Control technique

Reexamination Certificate

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C711S103000, C714S756000, C714S773000, C365S185030

Reexamination Certificate

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08010755

ABSTRACT:
To store N bits of M≧2 logical pages, the bits are interleaved and the interleaved bits are programmed to [N/M] memory cells, M bits per cell. Preferably, the interleaving puts the same number of bits from each logical page into each bit-page of the [N/M] cells. When the bits are read from the cells, the bits are de-interleaved. The interleaving may be deterministic or random, and may be effected by software or by dedicated hardware.

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Korean Patent Office, “Office Action,” corresponding Korean Patent Application No. 10-2007-7010412, mailed on Apr. 27, 2009, 6 pages (translation only.).

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