Starved source diffusion for avalanche photodiode

Details Starved source diffusion for avalanche photodiode Starved source diffusion for avalanche photodiode

2005-06-14

2009-06-30

Chen, Jack (Department: 2893)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S093000, C438S094000, C438S057000

Reexamination Certificate

active

07553690

ABSTRACT:
This disclosure is concerned with starved source diffusion methods for forming avalanche photodiodes are provided for controlling an edge effect. In one example, a method for manufacturing an avalanche photodiode includes forming an absorber layer and an avalanche layer over a substrate. Next, a patterned mask defining one or more openings is formed over a surface of the avalanche layer. Finally, a dopant is deposited over the patterned mask and the avalanche layer such that the dopant is blocked by the patterned mask but diffuses into the avalanche layer in areas where the patterned mask defines an opening. The patterned mask is configured such that the depth to which the dopant diffuses into the avalanche layer varies so as to form a sloped diffusion front in the avalanche layer.

REFERENCES:
patent: 6015721 (2000-01-01), Kim
Y. Liu, et al. “Simple, very low dark current, planar long-wavelength avalanche photodiode”, Applied Physics Letters 53(14) Oct. 3, 1988, pp. 1311-1313.

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