Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-24
2010-11-30
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27061
Reexamination Certificate
active
07843017
ABSTRACT:
A transistor having a start-up control element is provided. The transistor includes an N-type depletion mode transistor and an N-type enhancement mode transistor. The N-type depletion mode transistor includes a drain for electrically connecting to an external power supply, and a gate normally grounded. The N-type enhancement mode transistor includes a drain electrically connected to the external power supply, and a gate electrically connected to a source of the depletion mode transistor.
REFERENCES:
patent: 4609833 (1986-09-01), Guterman
patent: 4857823 (1989-08-01), Bitting
patent: 5294814 (1994-03-01), Das
patent: 6696884 (2004-02-01), Seven
Chang Kuang-Ming
Cheng Chien-Hsing
Quinto Kevin
Richtek Technology Corporation
Tran Minh-Loan T
Tung & Associates
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