Start-up circuit for maximum headroom CMOS devices

Details Start-up circuit for maximum headroom CMOS devices Start-up circuit for maximum headroom CMOS devices

1997-04-24

1998-12-01

Callahan, Timothy P.

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Synchronizing

327198, 327538, 327546, H03L 700

Patent

active

058444343

ABSTRACT:
The invention entails a circuit that enables maximum headroom cascode biasing schemes to locally generate all the required voltage from a single reference current. This leads to a considerable die size reduction compared to existing circuits, which require two reference currents. Single reference current biasing is achieved by a start-up circuit that overcomes the zero-current steady-state bias solution that would normally occur when attempting to bias a maximum headroom CMOS cascode biasing schemes from a single input current. The start-up circuit is extremely simple and does not counteract the die area advantage of the biasing set-up, nor does it affect its other virtues, including high isolation from one current source to another and robustness against lot-to-lot process variations.

REFERENCES:
patent: 5751182 (1998-05-01), Thiel

Affiliated with

Also associated with

Rating

Start-up circuit for maximum headroom CMOS devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Start-up circuit for maximum headroom CMOS devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Start-up circuit for maximum headroom CMOS devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2398589