Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-01
2005-02-01
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
06849906
ABSTRACT:
A first cell block in which a plurality of standard cells with a large cell height are arranged and a second cell block in which a plurality of standard cells with a small cell height are arranged. In the second cell block, transistors are formed whose shape and characteristics are practically the same as those of the transistors provided in the standard cells with the large cell height arranged in the first cell block.
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U.S. Appl. No. 09/819,532, filed Mar. 27, 2001, Umemoto et al.
U.S. Appl. No. 09/665,943, filed Sep. 21, 2000, Sei et al.
Maeno Muneaki
Morimoto Toshiki
Hogan & Hartson LLP
Nguyen Cuong
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