Standard cell arrangement for a magneto-resistive component

Details Standard cell arrangement for a magneto-resistive component Standard cell arrangement for a magneto-resistive component

2005-05-17

2005-05-17

Nguyen, Van Thu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S232000, C365S189080

Reexamination Certificate

active

06894921

ABSTRACT:
A standard cell arrangement for a magneto-resistive component, comprising at least one magneto-resistive layer system, preferably in the center of the cell, in addition to at least one input and at least one output on the cell periphery. The input is provided with two input connections which can be connected to each other in order to conduct a current producing a magnetic field used to influence the magneto-resistive layer system. The output has two output connections which can be connected to the magneto-resistive layer system to pick off a signal. The input and output connections are arranged at predetermined points in relation to a rectangular basic shape of said cell (respectively mirror-symmetrical or point-symmetrical to the center of the cell).

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S. Bae et al.: Magnetoelectronic Devices Using a-Fe2O3 Bottom GMR Spin-Valves, IEEE Transactions on Magnetics, vol. 37, No. 4, Jul. 2001.

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