Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated – With specified encapsulant
Reexamination Certificate
2009-04-22
2010-11-16
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
With specified encapsulant
C257S686000, C257S777000, C257S676000, C257SE25006
Reexamination Certificate
active
07834469
ABSTRACT:
A stacked type chip package structure including a lead frame, a chip package, a second chip, and a second molding compound is provided. The lead frame includes a plurality of first leads and second leads insulated from one another. The first leads have a first upper surface, and the second leads have a second upper surface which is not co-planar with the first upper surface. The chip package is disposed on the first leads and includes a substrate, a first chip, and a first molding compound. The second chip is stacked on the chip package and electrically connected to the second leads. The second molding compound is disposed on the lead frame and filled among the first leads and the second leads for encapsulating the chip package and the second chip.
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Chinese First Examination Report of China Application No. 20081009856710, dated Jun. 5, 2005.
Chuang Yao-Kai
Chung Chih-Ming
Liu Chao-Cheng
Liu Chien
Advanced Semiconductor Engineering Inc.
Cooley LLP
Monbleau Davienne
Nguyen Dilinh P
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