Stacked transistors and process

Details Stacked transistors and process Stacked transistors and process

2011-06-28

2011-06-28

Lee, Eugene (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S245000, C438S341000

Reexamination Certificate

active

07968384

ABSTRACT:
A method of horizontally stacking transistors on a common semiconductor substrate is initiated by providing a single crystal, generally silicon, semiconductor substrate. A plurality of transistors are formed on the single crystal semiconductor substrate and encapsulated in an insulating layer, such as silicon dioxide. One or more openings are formed through the insulating layer between the plurality of transistors so as to expose a surface of the single crystal semiconductor substrate. A layer of single crystal rare earth insulator material is epitaxially grown on the exposed surface of the single crystal semiconductor substrate. A layer of single crystal semiconductor material, generally silicon, is epitaxially grown on the layer of single crystal rare earth insulator material. An intermixed transistor is formed on the layer of single crystal semiconductor material.

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