Stacked-substrate processes for production of nitride...

Details Stacked-substrate processes for production of nitride... Stacked-substrate processes for production of nitride...

2006-04-14

2009-08-18

Coleman, W. David (Department: 2813)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Warping of semiconductor substrate

C438S458000, C257SE21121

Reexamination Certificate

active

07575982

ABSTRACT:
Methods are provided of fabricating compound nitride semiconductor structures. A group-III precursor and a nitrogen precursor are flowed into a processing chamber to deposit a first layer over a surface of a first substrate with a thermal chemical-vapor-deposition process. A second layer is deposited over a surface of a second substrate with the thermal chemical-vapor-deposition process using the first group-III precursor and the first nitrogen precursor. The first and second substrates are different outer substrates of a plurality of stacked substrates disposed within the processing chamber as a stack so that the first and second layers are deposited on opposite sides of the stack. Deposition of the first layer and deposition of the second layer are performed simultaneously.

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