Stacked static random access memory cell having capacitor

Details Stacked static random access memory cell having capacitor Stacked static random access memory cell having capacitor

1986-06-09

1989-02-14

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Flip-flop

365182, 357236, G11C 700, G11C 1140

Patent

active

048051470

ABSTRACT:
A static random access memory cell in which capacitors are electrically connected to storage nodes, so that the memory cell will not suffer from soft error even when it is hit by alpha particles. The memory cell has MOS transistors, capacitors constituted by two polycrystalline silicon layers, and resistors constituted by a polycrystalline silicon layer, that are formed on a semiconductor substrate.

REFERENCES:
patent: 4240097 (1980-12-01), Raymond, Jr.
patent: 4532609 (1985-07-01), Iizuka
patent: 4543595 (1985-09-01), Vora
patent: 4590508 (1986-05-01), Hirakawa et al.
patent: 4641165 (1987-02-01), Iizuka

Affiliated with

Also associated with

Rating

Stacked static random access memory cell having capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Stacked static random access memory cell having capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stacked static random access memory cell having capacitor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1371273