Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate
2007-10-16
2009-06-02
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Systems using particular element
Flip-flop
C365S049170, C365S189150, C365S189170, C365S194000, C365S207000, C365S230030
Reexamination Certificate
active
07542332
ABSTRACT:
Bit lines in SRAM array are multi-divided, so that a segment read circuit is connected to local bit line, which circuit serves as amplifying transistor of an amplifier with load device of a block read circuit. Thus the amplified voltage is latched by a current mirror which serves as another amplifier in the block read circuit, such that one data is latched early but another data is latched later because the amplifier changes its output quickly or slowly depending on the local bit line voltage. In this manner, time-domain sensing scheme is introduced to differentiate fast data and slow data, where the locking signal is generated by a read enable signal or a reference signal based on fast data. Additionally, alternatives and applications are described. And memory cell is formed from polysilicon because the memory cell drives lightly loaded bit line even though polysilicon transistor can flow low current, which realizes stacked memory.
REFERENCES:
patent: 5896336 (1999-04-01), McClure
patent: 6417032 (2002-07-01), Liaw
patent: 6829195 (2004-12-01), Uchida et al.
patent: 7151696 (2006-12-01), Suh et al.
patent: 7158428 (2007-01-01), Fujimoto
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