Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-08-21
2010-12-07
Thai, Luan C (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S612000, C257S780000, C257S779000, C257S738000, C257SE23023, C257SE23021, C257SE23069
Reexamination Certificate
active
07846829
ABSTRACT:
A semiconductor device is provided that includes a semiconductor chip, a plurality of solder bumps that electrically couple the semiconductor chip to the outside, and a metal bump being provided on the surface of each first solder bump which is at least a part of the plurality of solder bumps and being made of a metal having a melting point higher than that of the first solder bump. The wettability of the first solder bump is improved as each metal bump serves as a core when the corresponding first solder bump melts. Thus, the connection reliability of the first solder bump can be improved.
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patent: 2003/0096494 (2003-05-01), Sakuyama et al.
Harayama Masahiko
Onodera Masanori
Tanaka Junji
Spansion LLC
Thai Luan C
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