Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2008-07-07
2010-06-15
Potter, Roy K (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257S777000, C257SE23010
Reexamination Certificate
active
07737540
ABSTRACT:
A stacked semiconductor device includes a plurality of stacked chips, each having a plurality of elements to receive a signal. At least one first ladder main signal line for receiving the signal is arranged to pass through the chips. At least one second ladder main signal line is arranged to pass through the chips. A plurality of ladder buffers buffer the signal applied from the first ladder main signal line to the second ladder main signal line. The signal is uniformly distributed to the stacked chips using a ladder type circuit network technique.
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patent: 7330368 (2008-02-01), Saito et al.
patent: 2006/0092752 (2006-05-01), Seki et al.
patent: 10-107065 (1998-04-01), None
patent: 2006-128339 (2006-05-01), None
patent: 10-0267430 (2000-07-01), None
patent: 10-0366629 (2002-12-01), None
Abstract of KR 1020020022423 published Mar. 27, 2002.
Harness & Dickey & Pierce P.L.C.
Potter Roy K
Samsung Electronics Co,. Ltd.
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