Stacked semiconductor device and semiconductor memory module

Details Stacked semiconductor device and semiconductor memory module Stacked semiconductor device and semiconductor memory module

2007-10-16

2007-10-16

Clark, Jasmine (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Multiple housings

C257S686000, C257SE25006, C257SE25013, C257SE25018, C257SE25021, C257SE25027, C257SE23085, C257S777000

Reexamination Certificate

active

11176292

ABSTRACT:
A semiconductor device module includes a wiring substrate, a plurality of stacked semiconductor devices and a damping impedance circuit. The plurality of stacked semiconductor devices are provided on the wiring substrate and connected with a signal in a stubless manner, and each of the plurality of stacked semiconductor devices comprises a plurality of semiconductor chips which are stacked. The damping impedance circuit is provided for a transmission path of the signal for an uppermost semiconductor chip as the furthest one, from the wiring substrate, of the plurality of semiconductor chips of a first stacked semiconductor device as one of the plurality of stacked semiconductor devices which is first supplied with the signal.

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patent: 2003-78109 (2003-03-01), None
patent: 2003-124439 (2003-04-01), None
patent: 2003-273321 (2003-09-01), None

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