Stacked semiconductor device and method of forming serial...

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S738000, C257S774000, C257S777000, C257SE23011, C257SE23012, C257SE23021, C257SE23067, C257SE23145, C438S106000, C438S107000, C438S108000, C438S613000

Reexamination Certificate

active

07816776

ABSTRACT:
A stacked semiconductor device and a method of forming a serial path of the stacked semiconductor device are provided. The stacked semiconductor device includes a plurality of chips each having a first internal circuit for receiving an input signal, performing a designated operation and outputting an output signal. Each of the chips includes a serial bump disposed at the same position on one surface of each of the chips, receiving the input signal and transferring the input signal to the first internal circuit, and a serial through-silicon via (TSV) disposed at a position symmetrical to the serial bump with respect to a center of the chip to penetrate the chip, and receiving and transferring the output signal. Here, the chips are alternately rotated and stacked, so that the serial TSV and the serial bumps of adjacent chips contact each other. According to the stacked semiconductor device and method, a plurality of chips having the same pattern are rotated about the center of the chips and stacked, so that a parallel path and a serial path can be formed.

REFERENCES:
patent: 6924551 (2005-08-01), Rumer et al.
patent: 2004/0007778 (2004-01-01), Shinozaki et al.
patent: 2004/0021139 (2004-02-01), Jackson et al.
patent: 2007/0170575 (2007-07-01), Lee et al.
patent: 2003-168786 (2003-06-01), None
patent: 2005-141829 (2005-06-01), None
patent: 1020020023120 (2002-03-01), None
patent: 1020070035175 (2007-03-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Stacked semiconductor device and method of forming serial... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Stacked semiconductor device and method of forming serial..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stacked semiconductor device and method of forming serial... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4221629

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.