Stacked polycrystalline silicon film of high and low conductivit

Details Stacked polycrystalline silicon film of high and low conductivit Stacked polycrystalline silicon film of high and low conductivit

1980-12-17

1983-07-19

Roy, Upendra

Metal treatment

Barrier layer stock material, p-n type

With contiguous layer doped to degeneracy

148 15, 148187, 357 59, 357 91, H01L 21263, B05D 306

Patent

active

043941915

ABSTRACT:
A polycrystalline silicon film is implanted with an impurity in large amounts and is heated to be annealed, whereupon it is irradiated with a laser beam to be annealed.
Thus, a polycrystalline silicon film of very low resistivity consisting of a second layer whose activated impurity concentration is equal to or below a solid solubility and a first layer whose activated impurity concentration is above the solid solubility is formed.

REFERENCES:
patent: 3365371 (1975-01-01), Imai et al.
patent: 3892606 (1975-07-01), Chappelow et al.
patent: 4087571 (1978-05-01), Kamins
patent: 4109273 (1978-08-01), Glasl
patent: 4146906 (1979-03-01), Miyata
patent: 4198246 (1980-04-01), Wu
patent: 4214918 (1980-07-01), Gat et al.
patent: 4229502 (1980-10-01), Wu
patent: 4249968 (1981-02-01), Gardiner et al.
patent: 4309224 (1982-01-01), Shibata
Chou et al., IBM-TDB, 13 (1970), 1485.
Wu et al., Appl. Phys. Letts. 34 (1979), 737.
Gat et al., Appl. Phys. Letts. 33 (1978), 775.
White et al., Jour. Appl. Phys. 50 (1979), 3261.
Cohen et al., Appl. Phys. Letts. 33 (1978), 751.
Sealy, B. J., Jour. Crystal Growth 48 (1979), 655.

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