Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Patent
1998-03-10
1999-11-09
Utech, Benjamin
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
438299, 438301, 438303, 438305, 438306, 438307, 438257, 438585, 438586, 438588, 438592, 438595, 438593, 438655, H01L 21285
Patent
active
059813652
ABSTRACT:
A method of fabricating an integrated circuit transistor in a substrate is provided. A gate electrode stack is formed on the substrate. The stack has a first insulating layer, a first conductor layer on the first insulating layer, a second insulating layer on the first conductor layer, and a second conductor layer on the second insulating layer. First and second source/drain regions are formed in the substrate in spaced apart relation to define a channel region underlying the first insulating layer. First and second sidewall spacers are formed adjacent to the gate electrode stack. The second conductor layer and the second insulating layer are sacrificed and a silicide layer is formed on the first conductor layer. The void remaining after removal of the second conductor and insulating layers establishes a large separation between the silicide forming titanium layer and the first conductor layer. The result is a gate electrode stack that is resistant to lateral silicide formation due to silicon diffusion.
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Stanley Wolf and Richard N. Tauber, Silicon Processing for the VLSI Era, vol. 2: Process Integration, pp. 144-152, 1990.
Roger A. Haken; Application of the self-aligned titanium silicide process to very large-scale integrated n-metal-oxide-semiconductor and complementary metal-oxide- semiconductor technologies; J. Vac. Sci. Technol. B, vol. 3, No. 6; pp. 1657-1663; Nov./Dec. 1985.
R. M. Vadjikar et al.; The Effect of Processing Environment on the Lateral Growth of Titanium Silicide; J. Electrochem. Soc.: Solid-State Science and Technology, vol. 135, No. 10; pp. 2582-2586; Oct. 1988.
Cheek Jon D.
Gardner Mark I.
Wristers Derick J.
Advanced Micro Devices , Inc.
Anderson Matthew
Honeycutt Timothy M.
Utech Benjamin
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