Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-27
2007-03-27
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S292000
Reexamination Certificate
active
10911559
ABSTRACT:
A device is provided having a first electrode, a second electrode, a first photoactive region having a characteristic absorption wavelength λ1and a second photoactive region having a characteristic absorption wavelength λ2. The photoactive regions are disposed between the first and second electrodes, and further positioned on the same side of a reflective layer, such that the first photoactive region is closer to the reflective layer than the second photoactive region. The materials comprising the photoactive regions may be selected such that λ1is at least about 10% different from λ2. The device may further comprise an exciton blocking layer disposed adjacent to and in direct contact with the organic acceptor material of each photoactive region, wherein the LUMO of each exciton blocking layer other than that closest to the cathode is not more than about 0.3 eV greater than the LUMO of the acceptor material.
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Forrest Stephen
Rand Barry P.
Uchida Soichi
Xue Jiangeng
Kenyon & Kenyon LLP
Pham Long
The Trustees of Princeton University
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