Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-03-31
2008-08-05
Lee, Calvin (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
Reexamination Certificate
active
07407847
ABSTRACT:
A multi-body thickness (MBT) field effect transistor (FET) comprises a silicon body formed on a substrate. The silicon body may comprise a wide section and a narrow section between the wide section and the substrate. The silicon body may comprise more than one pair of a wide section and a narrow section, each pair being located at a different height of the silicon body. The silicon body is surrounded by a gate material on three sides. The substrate may be a bulk silicon substrate or a silicon-on-insulator (SOI) substrate. The MBT-FET combines the advantages of a wide fin device and a narrow fin device.
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Brask Justin K
Chau Robert S
Datta Suman
Doyle Brian S
Rakshit Titash
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Lee Calvin
LandOfFree
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