Stacked microelectronic devices and methods for...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip

Reexamination Certificate

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C257S686000, C257SE27137, C257SE27144, C257SE27161

Reexamination Certificate

active

07485969

ABSTRACT:
Stacked microelectronic devices and methods for manufacturing such devices. An embodiment of a microelectronic device can include a support member and a first known good microelectronic die attached to the support member. The first die includes an active side, a back side, a first terminal, and integrated circuitry electrically coupled to the first terminal. The first die also includes a first redistribution structure at the active side. The microelectronic device can also include a second known good microelectronic die attached to the first die in a stacked configuration with a back side of the second die facing the support member and an active side of the second die facing away from the support member. The second die includes a second redistribution structure at the active side. The device can further include a casing covering the first die, the second die, and at least a portion of the support member.

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Search Report and Written Opinion for Singapore Application No. 200505617-1, 17 pages, Feb. 2, 2007.

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