Stacked microelectronic assemblies and methods of making same

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip

Reexamination Certificate

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C257S685000, C257S686000, C257S697000, C439S058000, C439S067000, C439S068000

Reexamination Certificate

active

06885106

ABSTRACT:
A stacked microelectronic assembly includes a dielectric element and a first and second microelectronic element stacked one atop the other with the first microelectronic element disposed between the second microelectronic element and the dielectric. The dielectric element has opposed first and second surfaces with conductive features exposed at the first surface and terminals exposed on the second surface. Preferably, the contact-bearing face of the first microelectronic element confronts the first surface of the dielectric with at least some of the conductive features being movable with respect to the contacts or terminals. By providing such movable features, joining units have heights of about 300 microns or less may be joined to the terminals thereby reducing the overall height of the microelectronic assembly to 1.2 mm and less.

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