Stacked flip chip die assembly

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip

Reexamination Certificate

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Details

C257SE23069, C257SE23126, C257SE23135, C257SE25013, C257S738000, C257S737000, C257S778000, C257S685000, C257S686000, C257S723000, C257S784000, C257S779000, C257S780000

Reexamination Certificate

active

07859119

ABSTRACT:
A stack of semiconductor dies is disclosed. A first stack level includes a first semiconductor die and at least one first support that are attached to a substrate surface. A second level includes a second semiconductor die and at least one second support that are attached to the active surface of the first semiconductor die and to a coplanar surface of the first support(s). A third level includes a third semiconductor die attached to the active surface of the second semiconductor die and to a coplanar surface of the second support(s). The second and third semiconductor dies do not overlap bond pads of the first and second semiconductor dies, respectively. An adhesive film overlies the entire inactive surface of the second and third semiconductor dies, and attaches the second and third semiconductor dies to the immediately underlying active surface and support(s).

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