Stacked electrical device having regions of electrical isolation

Details Stacked electrical device having regions of electrical isolation Stacked electrical device having regions of electrical isolation

1996-07-26

1998-09-08

Whitehead, Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257303, 257306, 257309, H01L 27108

Patent

active

058048537

ABSTRACT:
A semiconductor structure having electrical conductors positioned over each other, but electrically isolated from each other, is disclosed. The lower conductor has a recess in its upper surface, and the recess is at least partially filled with an oxide-type material, thereby isolating the lower conductor from the upper conductor. These conductors would normally contact each other because of the somewhat imprecise patterning and etching steps used to fabricate a multitude of conductive elements, e.g., in a very dense semiconductor structure. Stacked capacitor cells incorporating this structure are also disclosed.

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"A 1.28 .mu.m.sup.2 Bit-Line Shielded Memory Cell Technology for 64 Mb DRAMs", Kawamoto et al., 1990 Symposium on VLSI Technology, 13-14 no month.
"3-Dimensional Stacked Capacitor Cell for 16M and 64M DRAMs", Ema et al., IEDM, 592-595 (1988) no month.

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