Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2003-04-28
2008-03-18
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257S778000, C438S108000
Reexamination Certificate
active
07344969
ABSTRACT:
Semiconductor devices and stacked die assemblies, and methods of fabrication are provided. In various embodiments, the die assembly comprises a first die mounted on a substrate and a second die mounted on the first die. In one embodiment, the second die has a recessed edge along the perimeter of the bottom surface to provide clearance for a bonding element extending from bond pads on the first die to pads on the substrate, thus eliminating the need for a spacer between the two dies. In another embodiment, the second die is at least partially disposed within a recess in the upper surface of the first die. In another embodiment, an adhesive element is disposed within a recess in the bottom surface of the first die for attaching the first die to the substrate. In yet another embodiment, the first die is at least partially disposed within a recess within the bottom surface of the second die. The stacked die assemblies can be encapsulated to form semiconductor packages.
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IBM Research Disclosure RD41388 (N.N.), Sep. 1, 1998.
Chew Beng Chye
Lim Thiam Chye
Neo Chee Peng
Pour Cheng Poh
Tan Hock Chuan
Le Thao P.
Micro)n Technology, Inc.
Whyte Hirschboeck Dudek SC
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