Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip
Reexamination Certificate
2006-11-07
2006-11-07
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Chip mounted on chip
C257SE25013, C257SE23140, C257SE23036, C257SE23052, C257S686000, C257S685000, C257S723000, C257S778000, C257S737000, C257S738000, C257S784000, C257S786000, C257S698000, C257S724000
Reexamination Certificate
active
07132753
ABSTRACT:
A stack of semiconductor dies is disclosed. A first stack level includes a first semiconductor die and at least one first support that are attached to a substrate surface. A second level includes a second semiconductor die and at least one second support that are attached to the active surface of the first semiconductor die and to a coplanar surface of the first support(s). A third level includes a third semiconductor die attached to the active surface of the second semiconductor die and to a coplanar surface of the second support(s). The second and third semiconductor dies do not overlap bond pads of the first and second semiconductor dies, respectively. An adhesive film overlies the entire inactive surface of the second and third semiconductor dies, and attaches the second and third semiconductor dies to the immediately underlying active surface and support(s).
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Roger D. St. Amand et al, U.S. Appl. No. 10/991,631, filed Nov. 17, 2004.
Perelman Vladimir
St. Amand Roger D.
Amkor Technology Inc.
Gunnison McKay & Hodgson, L.L.P.
Hodgson Serge J.
Williams Alexander Oscar
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