Stacked device underfill and a method of fabrication

Details Stacked device underfill and a method of fabrication Stacked device underfill and a method of fabrication

2007-02-20

2007-02-20

Brewster, William M. (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For plural devices

C257S750000, C257S774000, C257SE23174, C257SE23175

Reexamination Certificate

active

10814083

ABSTRACT:
Numerous embodiments of a stacked device underfill and a method of formation are disclosed. In one embodiment, a method of forming stacked semiconductor device with an underfill comprises forming one or more layers of compliant material on at least a portion of the top surface of a substrate, said substrate, curing at least a portion of the semiconductor device, selectively removing a portion of the one or more layers of compliant material, and assembling the substrate into a stacked semiconductor device.

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