Stacked delta cell capacitor

Static information storage and retrieval – Systems using particular element – Capacitors

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257306, 437 52, 437 48, H01L 2968

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active

053216490

ABSTRACT:
A stacked delta cell (SDC) capacitor using a modified stacked capacitor storage cell fabrication process. The SDC is made up of polysilicon structure, having an inverted deltoid cross section, located at a buried contact and extending to an adjacent storage node overlaid by polysilicon with a dielectric sandwiched in between. The addition of the polysilicon structure increases storage capability 120% without enlarging the surface area defined for a normal stacked capacitor cell.

REFERENCES:
patent: 4140389 (1992-09-01), Kimura et al.
patent: 4742018 (1988-05-01), Kimura et al.
patent: 5068698 (1991-11-01), Koyama
patent: 5077688 (1991-12-01), Kumanoya et al.
patent: 5091761 (1992-02-01), Hiraiwa et al.
patent: 5124767 (1992-06-01), Koyama
patent: 5126810 (1992-07-01), Gotou
patent: 5135883 (1992-08-01), Bae et al.
"3-Dimensional Stacked Capacitor Cell for 16M and 64M DRAMs" by T. Ema et al., 1988 IEEE, pp. 592-595.
"A Spread Stacked Capacitor (SSC) Cell for 64MBit DRAMs" by S. Inoue et al., 1989 IEEE, pp. 31-34.

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