Static information storage and retrieval – Systems using particular element – Capacitors
Patent
1993-06-11
1994-06-14
LaRoche, Eugene R.
Static information storage and retrieval
Systems using particular element
Capacitors
257306, 437 52, 437 48, H01L 2968
Patent
active
053216490
ABSTRACT:
A stacked delta cell (SDC) capacitor using a modified stacked capacitor storage cell fabrication process. The SDC is made up of polysilicon structure, having an inverted deltoid cross section, located at a buried contact and extending to an adjacent storage node overlaid by polysilicon with a dielectric sandwiched in between. The addition of the polysilicon structure increases storage capability 120% without enlarging the surface area defined for a normal stacked capacitor cell.
REFERENCES:
patent: 4140389 (1992-09-01), Kimura et al.
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patent: 5068698 (1991-11-01), Koyama
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patent: 5091761 (1992-02-01), Hiraiwa et al.
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"3-Dimensional Stacked Capacitor Cell for 16M and 64M DRAMs" by T. Ema et al., 1988 IEEE, pp. 592-595.
"A Spread Stacked Capacitor (SSC) Cell for 64MBit DRAMs" by S. Inoue et al., 1989 IEEE, pp. 31-34.
Cummings Steven D.
Dennison Charles H.
Fazan Pierre
Lee Ruojia
Liu Yauh-Ching
LaRoche Eugene R.
Le Vu A.
Micro)n Technology, Inc.
Paul David J.
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