Stacked columnar 1T- n MTj MRAM structure and its method of...

Details Stacked columnar 1T- n MTj MRAM structure and its method of... Stacked columnar 1T- n MTj MRAM structure and its method of...

2005-06-02

2008-10-21

Nguyen, Viet Q (Department: 2827)

Static information storage and retrieval

Read/write circuit

Including specified plural element logic arrangement

C365S046000, C365S063000, C365S100000

Reexamination Certificate

active

07440339

ABSTRACT:
This invention relates to an MRAM array architecture which incorporates certain advantages from both cross-point and 1T-1MTJ architectures during reading operations. The fast read-time and higher signal to noise ratio of the 1T-1MTJ architecture and the higher packing density of the cross-point architecture are both exploited by using a single access transistor to control the reading of multiple stacked columns of MRAM cells each column being provided in a respective stacked memory layer.

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