Stacked chip package with redistribution lines

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings

Reexamination Certificate

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C257S777000, C257S698000, C257S784000, C257SE25006, C257SE25010, C257SE25011, C257SE25013, C257SE25020, C257SE25023, C257SE25027, C257SE23085

Reexamination Certificate

active

07973401

ABSTRACT:
A chip package comprises a first chip having a first side and a second side, wherein said first chip comprises a first pad, a first trace, a second pad and a first passivation layer at said first side thereof, an opening in said first passivation layer exposing said first pad, said first trace being over said first passivation layer, said first trace connecting said first pad to said second pad; a second chip having a first side and a second side, wherein said second chip comprises a first pad at said first side thereof, wherein said second side of said second chip is joined with said second side of side first chip; a substrate joined with said first side of said first chip or with said first side of said second chip; a first wirebonding wire connecting said second pad of said first chip and said substrate; and a second wirebonding wire connecting said first pad of said second chip and said substrate.

REFERENCES:
patent: 5282312 (1994-02-01), DiStefano et al.
patent: 5384488 (1995-01-01), Golshan et al.
patent: 5534465 (1996-07-01), Frye et al.
patent: 5854740 (1998-12-01), Cha
patent: 5861666 (1999-01-01), Bellaar
patent: 5969424 (1999-10-01), Matsuki et al.
patent: 6066877 (2000-05-01), Williams et al.
patent: 6121676 (2000-09-01), Solberg
patent: 6177731 (2001-01-01), Ishida et al.
patent: 6187680 (2001-02-01), Costrini et al.
patent: 6188028 (2001-02-01), Haba et al.
patent: 6225688 (2001-05-01), Kim et al.
patent: 6229221 (2001-05-01), Kloen et al.
patent: 6229711 (2001-05-01), Yoneda
patent: 6300234 (2001-10-01), Flynn et al.
patent: 6410435 (2002-06-01), Ryan
patent: 6429112 (2002-08-01), Smith et al.
patent: 6465893 (2002-10-01), Khandros et al.
patent: 6472736 (2002-10-01), Yeh et al.
patent: 6476506 (2002-11-01), O'Connor et al.
patent: 6476507 (2002-11-01), Takehara
patent: 6593222 (2003-07-01), Smoak
patent: 6683380 (2004-01-01), Efland et al.
patent: 6699730 (2004-03-01), Kim et al.
patent: 6707159 (2004-03-01), Kumamoto et al.
patent: 6756664 (2004-06-01), Yang
patent: 6762122 (2004-07-01), Mis et al.
patent: 6791178 (2004-09-01), Yamaguchi et al.
patent: 6798050 (2004-09-01), Homma et al.
patent: 6800555 (2004-10-01), Test et al.
patent: 6844631 (2005-01-01), Yong et al.
patent: 6885106 (2005-04-01), Damberg et al.
patent: 6897565 (2005-05-01), Pflughaupt et al.
patent: 6913949 (2005-07-01), Pflughaupt et al.
patent: 6940158 (2005-09-01), Haba et al.
patent: 6952047 (2005-10-01), Li
patent: 6965158 (2005-11-01), Smith et al.
patent: 6977440 (2005-12-01), Pflughaupt et al.
patent: 6979647 (2005-12-01), Bojkov et al.
patent: 7045899 (2006-05-01), Yamane et al.
patent: 7060607 (2006-06-01), Efland
patent: 7061121 (2006-06-01), Haba
patent: 7071547 (2006-07-01), Kang et al.
patent: 7149095 (2006-12-01), Warner et al.
patent: 7183643 (2007-02-01), Gibson et al.
patent: 7229850 (2007-06-01), Li
patent: 7335995 (2008-02-01), Pflughaupt et al.
patent: 7508059 (2009-03-01), Lin et al.
patent: 7589409 (2009-09-01), Gibson et al.
patent: 2001/0035452 (2001-11-01), Test et al.
patent: 2001/0040290 (2001-11-01), Sakurai et al.
patent: 2001/0051426 (2001-12-01), Pozder et al.
patent: 2002/0000671 (2002-01-01), Zuniga et al.
patent: 2002/0005577 (2002-01-01), Shimoda
patent: 2002/0043723 (2002-04-01), Shimizu et al.
patent: 2002/0089050 (2002-07-01), Michii et al.
patent: 2003/0107118 (2003-06-01), Pflughaupt et al.
patent: 2004/0031972 (2004-02-01), Pflughaupt et al.
patent: 2004/0070083 (2004-04-01), Su
patent: 2004/0203190 (2004-10-01), Pflughaupt et al.
patent: 2005/0098869 (2005-05-01), Shiozawa
patent: 2005/0173796 (2005-08-01), Pflughaupt et al.
patent: 2005/0194672 (2005-09-01), Gibson et al.
patent: 2006/0033216 (2006-02-01), Pflughaupt et al.
patent: 2006/0202317 (2006-09-01), Barakat et al.
patent: 2007/0290316 (2007-12-01), Gibson et al.
patent: 2008/0284037 (2008-11-01), Andry et al.
Mistry, K. et al. “A 45nm Logic Technology with High-k+ Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging,” IEEE International Electron Devices Meeting (2007) pp. 247-250.
Edelstein, D.C., “Advantages of Copper Interconnects,” Proceedings of the 12th International IEEE VLSI Multilevel Interconnection Conference (1995) pp. 301-307.
Theng, C. et al. “An Automated Tool Deployment for ESD (Electro-Static-Discharge) Correct-by-Construction Strategy in 90 nm Process,” IEEE International Conference on Semiconductor Electronics (2004) pp. 61-67.
Gao, X. et al. “An improved electrostatic discharge protection structure for reducing triggering voltage and parasitic capacitance,” Solid-State Electronics, 27 (2003), pp. 1105-1110.
Yeoh, A. et al. “Copper Die Bumps (First Level Interconnect) and Low-K Dielectrics in 65nm High Volume Manufacturing,” Electronic Components and Technology Conference (2006) pp. 1611-1615.
Hu, C-K. et al. “Copper-Polyimide Wiring Technology for VLSI Circuits,” Materials Research Society Symposium Proceedings VLSI V (1990) pp. 369-373.
Roesch, W. et al. “Cycling copper flip chip interconnects,” Microelectronics Reliability, 44 (2004) pp. 1047-1054.
Lee, Y-H. et al. “Effect of ESD Layout on the Assembly Yield and Reliability,” International Electron Devices Meeting (2006) pp. 1-4.
Yeoh, T-S. “ESD Effects on Power Supply Clamps,” Proceedings of the 6th International Sympoisum on Physical & Failure Analysis of Integrated Circuits (1997) pp. 121-124.
Edelstein, D. et al. “Full Copper Wiring in a Sub-0.25 pm CMOS ULSI Technology,” Technical Digest IEEE International electron Devices meeting (1997) pp. 773-776.
Venkatesan, S. et al. “A High Performance 1.8V, 0.20 pm CMOS Technology with Copper Metallization,” Technical Digest IEEE International Electron Devices Meeting (1997) pp. 769-772.
Jenei, S. et al. “High Q Inductor Add-on Module in Thick Cu/SiLK™ single damascene,” Proceedings from the IEEE International Interconnect Technology Conference (2001) pp. 107-109.
Groves, R. et al. “High Q Inductors in a SiGe BiCMOS Process Utilizing a Thick Metal Process Add-on Module,” Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (1999) pp. 149-152.
Sakran, N. et al. “The Implementation of the 65nm Dual-Core 64b Merom Processor,” IEEE International Solid-State Circuits Conference, Session 5, Microprocessors, 5.6 (2007) pp. 106-107, p. 590.
Kumar, R. et al. “A Family of 45nm IA Processors,” IEEE International Solid-State Circuits Conference, Session 3, Micropressor Technologies, 3.2 (2009) pp. 58-59.
Bohr, M. “The New Era of Scaling in an SoC World,” International Solid-State Circuits Conference (2009) Presentation Slides 1-66.
Bohr, M. “The New Era of Scaling in an SoC World,” International Solid-State Circuits Conference (2009) pp. 23-28.
Ingerly, D. et al. “Low-K Interconnect Stack with Thick Metal 9 Redistribution Layer and Cu Die Bump for 45nm High Volume Manufacturing,” International Interconnect Technolgoy Conference (2008) pp. 216-218.
Kurd, N. et al. “Next Generation Intel® Micro-architecture (Nehalem) Clocking Architecture,” Symposium on VLSI Circuits Digest of Technical Papers (2008) pp. 62-63.
Maloney, T. et al. “Novel Clamp Circuits for IC Power Supply Protection,” IEEE Transactions on Components, Packaging, and Manufacturing Technology, Part C, vol. 19, No. 3 (Jul. 1996) pp. 150-161.
Geffken, R. M. “An Overview of Polyimide Use in Integrated Circuits and Packaging,” Proceedings of the Third International Symposium on Ultra Large Scale Integration Science and Technology (1991) pp. 667-677.
Luther, B. et al. “Planar Copper-Polyimide Back End of the Line Interconnections for ULSI Devices,” Proceedings of the 10th International IEEE VLSI Multilevel Interconnection Conference (1993) pp. 15-21.
Master, R. et al. “Ceramic Mini-Ball Grid Array Package for High Speed Device,

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