Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2005-01-25
2005-01-25
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S624000, C438S639000
Reexamination Certificate
active
06846733
ABSTRACT:
First and second wirings are formed on a first insulating film. Each of the wirings is arranged so that a conductive film, a silicon oxide film and a silicon nitride film are laminated. Thereafter, a silicon oxide insulating film is formed on the whole surface. The silicon oxide insulating film is etched so that a contact hole is formed between the first and second wirings. Since the silicon oxide film and the silicon nitride film exist on the conductive film of each wiring, the conductive film is not exposed at the time of etching. Thereafter, an insulating film is formed on a side wall of the contact hole, and the conductive film exposed through the contact hole is covered by the insulating film.
REFERENCES:
patent: 4977105 (1990-12-01), Okamoto et al.
patent: 5037777 (1991-08-01), Mele et al.
patent: 5055423 (1991-10-01), Smith et al.
patent: 5061650 (1991-10-01), Dennison et al.
patent: 5082797 (1992-01-01), Chang et al.
patent: 5200358 (1993-04-01), Bollinger et al.
patent: 5275972 (1994-01-01), Ogawa et al.
patent: 5279982 (1994-01-01), Crotti
patent: 5312769 (1994-05-01), Liou et al.
patent: 5466639 (1995-11-01), Ireland
patent: 5482894 (1996-01-01), Havemann
patent: 5578524 (1996-11-01), Fukase et al.
patent: 5631179 (1997-05-01), Sung et al.
patent: 5643833 (1997-07-01), Tsukamoto
patent: 5667918 (1997-09-01), Brainerd et al.
patent: 5828094 (1998-10-01), Lee
patent: 5840621 (1998-11-01), Kasai
patent: 5841195 (1998-11-01), Lin et al.
patent: 2249429 (1992-05-01), None
patent: 03-064964 (1991-03-01), None
patent: 03-108359 (1991-05-01), None
patent: 06-005714 (1994-01-01), None
patent: 06-037273 (1994-02-01), None
patent: 06-061361 (1994-03-01), None
patent: 06-120447 (1994-04-01), None
patent: 06-338597 (1994-12-01), None
Kohyama Yusuke
Ohsawa Takashi
Sawada Shizuo
Banner & Witcoff , Ltd.
Kabushiki Kaisha Toshiba
Malsawma Lex H.
Smith Matthew
LandOfFree
Stacked capacitor-type semiconductor storage device and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Stacked capacitor-type semiconductor storage device and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stacked capacitor-type semiconductor storage device and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3423869