Stacked capacitor type semiconductor memory device and manufactu

Details Stacked capacitor type semiconductor memory device and manufactu Stacked capacitor type semiconductor memory device and manufactu

1992-09-21

1994-01-11

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257308, 257534, H01L 2968, H01L 2978, H01L 2992

Patent

active

052784371

ABSTRACT:
A semiconductor memory device according to the present invention comprises a memory cell having one transistor and one stacked capacitor. The stacked capacitor is stacked on the surface of a semiconductor substrate. Further, the stacked capacitor has a structure extending on a gate electrode and a word line through an insulating layer. A lower electrode layer of the capacitor has various concave/convex shapes, i.e. step portions and projecting portions formed on the surface thereof. These shapes are made by employing various etching processes. The lower electrode layer has such various concave/convex shapes formed thereon, so that a surface area and capacitance of the capacitor can be increased.

REFERENCES:
patent: 4151607 (1979-04-01), Koyanagi et al.
patent: 4742018 (1988-05-01), Kimura et al.
patent: 4754313 (1988-06-01), Takamae et al.
patent: 4953126 (1990-08-01), Ema
patent: 4958318 (1990-09-01), Harai
patent: 4974040 (1990-11-01), Taguchi et al.

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