Stacked capacitor type dynamic random access memory

Details Stacked capacitor type dynamic random access memory Stacked capacitor type dynamic random access memory

1990-10-30

1991-12-10

Mintel, William

357 51, 357 41, H01L 2968, H01L 2702

Patent

active

050722700

ABSTRACT:
A DRAM has a stacked capacitor. The stacked capacitor is formed of a first portion extending on an insulating layer on the substrate, a cylindrical second portion extending vertically upward from the first portion, and a third portion extending from the second portion to have an eaves-like shape, so as to increase charge storage capacity. The structure increases opposing areas between the electrodes of the capacitor, increasing the capacitor capacity. Between the adjacent capacitors, the projecting eaves-like third portions are overlapped with each other without contact, so as to increase the area of the third portions. By this structure, the marginal space between memory cells can be utilized as capacitor region.

REFERENCES:
patent: 4974040 (1990-11-01), Taguchi et al.
W. Wakamiya et al, "Novel Stacked Capacitor Cell for 64Mb Dram", 1989 Symposium on VLSI Technology Digest of Technical Papers, pp. 69-70.

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