Stacked capacitor semiconductor device

Details Stacked capacitor semiconductor device Stacked capacitor semiconductor device

1996-12-16

1999-10-26

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257306, 257308, 257309, H01L 27108, H01L 2941, H01L 2978

Patent

active

059733497

ABSTRACT:
A semiconductor device is made up of a substrate having a top surface, and a fin type capacitor having a first electrode including a first part which extends upwards from the substrate and a second part which extends approximately parallel to the top surface of the substrate from the first part. The second part is made up of at least one conductor layer.

REFERENCES:
patent: 4801560 (1989-01-01), Wood et al.
patent: 4839311 (1989-06-01), Riley et al.
patent: 5135883 (1992-08-01), Bae et al.
patent: 5155657 (1992-10-01), Oehrlein et al.
patent: 5196365 (1993-03-01), Gotou
patent: 5223729 (1993-06-01), Kudoh et al.
patent: 5250457 (1993-10-01), Dennison
patent: 5292677 (1994-03-01), Dennison
Ogawa, English Translation of p. 2, col. 2, last line through p. 3, col. 4, line 7.
Ema et al., IDM Technical Digest, 1988, pp. 592-595, "3-Dimensional Stacked Capacitor Cell for 16M and 64M DRAMS".
Itabashi et al., IEDM Technical Digest, 1991, pp. 477-480, "A Split Wordline Cell For 16MB SRAM Using Polysilicon Sidewall Contacts".

Affiliated with

Also associated with

Rating

Stacked capacitor semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Stacked capacitor semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stacked capacitor semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-767561