Stacked capacitor having improved charge storage capacity

Details Stacked capacitor having improved charge storage capacity Stacked capacitor having improved charge storage capacity

1998-05-06

1999-12-28

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257306, H01L 27108, H01L 2976, H01L 2994

Patent

active

060085150

ABSTRACT:
A method of forming a capacitor that has improved charge storage capacity in a high density memory device that has shallow trench isolation regions and a capacitor produced by the method are provided. The method includes the step of forming an oxide spacer that consists of a plurality of oxide layers deposited by two alternating methods of thermal CVD and plasma CVD. After a contact hole is first etched by a plasma etching technique, the hole is again decoratively etched by an etchant such as hydrogen fluoride which has a high selectivity toward oxide layers formed by the plasma CVD method and a low selectivity toward oxide layers formed by the thermal CVD method. As a result, a corrugated side-wall of the contact hole is formed which affords the capacitor cell with an increased surface area leading to an improved charge storage capacity.

REFERENCES:
patent: 5240871 (1993-08-01), Doan et al.
patent: 5376233 (1994-12-01), Man
patent: 5753948 (1998-05-01), Nguyen et al.

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