Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2004-02-11
2008-08-05
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S295000, C257S296000, C257SE29338
Reexamination Certificate
active
07408212
ABSTRACT:
An electrically programmable, non-volatile resistive memory includes an array of memory cells, a plurality of bit lines, and a plurality of word lines. Each memory cell comprises a resistive element and a Schottky diode coupled in series and having first and second terminals. Each bit line couples to the first terminal of all memory cells in a respective column of the array. Each word line couples to the second terminal of all memory cells in a respective row of the array. The resistive element for each memory cell may be formed with a film of a perovskite material (e.g., Pr0.7Ca0.3MnO3). The Schottky diode for each memory cell may be formed by a thin film of amorphous silicon. The films for the resistive element and Schottky diode for each memory cell may be stacked in a compact island at the cross point between a bit line and a word line.
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Chou Kai-Cheng
Huang Kenlin
Luan Harry S.
Wang Arthur
Young Jein-Chen
Dinh & Associates
Huynh Andy
Nguyen Thinh T
Winbond Electronics Corporation
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