Semiconductor device manufacturing: process – Making point contact device
Patent
1999-03-31
2000-09-12
Picardat, Kevin M.
Semiconductor device manufacturing: process
Making point contact device
438113, 438127, 438460, H01L 2144, H01L 2148, H01L 2150
Patent
active
061177040
ABSTRACT:
A method and structure are disclosed which involve the re-wafering of previously processed and tested IC chips. The chips are encapsulated in supporting non-conductive material in a neo-wafer, so that they may be further processed preparatory to dicing layer units from the neo-wafer, which layer units are ready for stacking in a three-dimensional electronic package. Although the layer areas are the same, different stacked layers may contain different sized IC chips, and a single layer may encapsulate a plurality of chips. Precision of location of the separate IC chips in the neo-wafer is insured by use of photo-patterning means to locate openings in the neo-wafer into which extend conductive bumps on the chips. The neo-wafer is preferably formed with separate cavities in which the chips are located before they are covered with the encapsulating material.
REFERENCES:
patent: 5478781 (1995-12-01), Bertin et al.
patent: 5952725 (1999-09-01), Ball
Camien Andrew N.
Ozguz Volkan H.
Yamaguchi James S.
Collins D. M.
Irvine Sensors Corporation
Picardat Kevin M.
Plante Thomas J.
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